 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENA0465 CPH5863 SANYO Semiconductors DATA SHEET CPH5863 Features * * MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications * * DC / DC converter applications. Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] * 2.5V drive. [SBD] * Short reverse recovery time. * Low forward voltage. * Low reverse current. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1000mm20.8mm) 1unit 30 12 2.5 10 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : YR Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82907PE TI IM TC-00000875 No. A0465-1/5 CPH5863 Continued from preceding page. Parameter [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 700 5 --55 to +125 --55 to +125 V V mA A C C Symbol Conditions Ratings Unit Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=300A IF=700mA VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 30 0.55 80 25 10 V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.3A ID=1.3A, VGS=4V ID=0.7A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A IS=2.5A, VGS=0V 30 1 10 0.4 1.9 3.2 95 120 270 40 35 10 40 39 38 3.7 0.65 1 0.9 1.2 125 170 1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7017A-005 2.9 0.15 Electrical Connection 5 4 3 5 4 3 0.2 2.8 1.6 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 0.6 Top view 0.6 1 0.95 2 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.9 0.2 No. A0465-2/5 CPH5863 Switching Time Test Circuit [MOSFET] trr Test Circuit VDD=10V [SBD] VIN 4V 0V 100mA VIN D PW=10s D.C.1% 50 100 10 100mA G 10s --5V P.G 50 S CPH5863 trr 4.0V Drain Current, ID -- A 2.0 V 2.0 Drain Current, ID -- A 2.0 1.5 1.5V 1.5 1.0 1.0 Ta= 7 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VGS=1.0V 0.8 0.9 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS -- V 250 IT06404 250 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT06405 [MOSFET] RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 200 1.3A 150 150 ID=0.7A 100 100 A =0.7 , ID 2.5V = 1.3A VGS , I D= =4.0V VGS 50 50 0 0 2 4 6 8 10 IT06406 0 --60 --40 --20 0 20 40 25 C 0.5 0.5 60 80 --25 C 5C 100 Ta= 2.5 2.5 --25 C 75 C 120 140 160 3.0 ID -- VDS 3.0V 2.5V [MOSFET] 3.0 ID -- VGS VDS=10V [MOSFET] Gate-to-Source Voltage, VGS -- V 10 Ambient Temperature, Ta -- C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT06407 yfs -- ID VDS=10V IS -- VSD Forward Transfer Admittance, yfs -- S 7 5 3 2 [MOSFET] VGS=0V 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 7 10 IT06408 0.01 0.2 0.3 0.4 0.5 Ta= 7 7 0.6 5C 25 C --25 C 1.0 C -25 C =75 Ta Source Current, IS -- A C 25 0.7 0.8 0.9 1.0 1.1 10mA 1.2 IT06409 ID=1.3A RL=11.5 VOUT Duty10% Diode Forward Voltage, VSD -- V No. A0465-3/5 CPH5863 1000 7 5 SW Time -- ID [MOSFET] VDD=15V VGS=4V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 Ciss td(off) tf 100 7 5 td(on) tr Coss 3 2 10 Crss 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 5 7 10 IT06410 2 10 7 5 0 5 10 15 20 25 30 VGS -- Qg [MOSFET] Drain-to-Source Voltage, VDS -- V IT06411 [MOSFET] ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=2.5A Drain Current, ID -- A IDP=10A PW10s 1m s 10 m 10 s 0m DC s op er ati on 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=2.5A Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (1000mm20.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 3.5 4.0 0.01 0.01 Total Gate Charge, Qg -- nC 1.0 IT06412 PD -- Ta M ou nt ed Drain-to-Source Voltage, VDS -- V IT11356 [MOSFET] Allowable Power Dissipation, PD -- W 0.9 0.8 on 0.6 ac er am ic bo ar d 0.4 0.2 (1 00 0m m2 0. 8m m )1 un it 100 120 140 160 IT11357 0 0 20 40 60 80 Ambient Temperature, Ta -- C 5 3 2 1.0 7 5 3 2 IF -- VF [SBD] 5 2 1000 IR -- VR 5C Ta=12 [SBD] Reverse Current, IR -- A Forward Current, IF -- A 5 2 100 5 2 10 5 2 1.0 5 2 0.1 0 100C 75C 50C 25C 25 C Ta= 1 0.1 7 5 3 2 0.01 0 25C 0.2 0.4 0.6 0.8 1.0 ID00383 5 10 15 20 25 30 35 ID00384 Forward Voltage, VF -- V Reverse Voltage, VR -- V No. A0465-4/5 CPH5863 Average Forward Power Dissipation, PF(AV) -- W 0.8 PF(AV) -- IO (1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 Rectangular wave [SBD] 2 C -- VR [SBD] f=1MHz Interterminal Capacitance, C -- pF 1.0 ID00385 100 7 5 0.6 (4) (3) (2) 0.4 360 (1) 3 2 0.2 Sine wave 180 10 7 5 1.0 2 3 5 7 10 2 3 5 ID00386 0 0 0.2 0.4 0.6 360 0.8 Average Output Current, IO -- A 6 IFSM -- t IS Reverse Voltage, VR -- V [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 5 4 20ms t 3 2 1 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00387 Note on usage : Since the CPH5863 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No. A0465-5/5 |
Price & Availability of CPH5863
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |